Influence of sputtering parameters on microstructure and mechanical properties of GeSbTe films

来源期刊：中国有色金属学报(英文版)2008年第1期

论文作者：付永忠

文章页码：167 - 170

Key words：GeSbTe films; sputtering parameters; microstructure; mechanical properties

Abstract: GeSb₂Te₄ films were deposited on Si substrates by RF magnetron sputtering, and the effects of sputtering power on the surface topography and anti-compression properties were studied with atomic force microscope(AFM) and nanoindenter. Meanwhile, the mechanical properties of GeSb₂Te₄ films with oxygen impurity were also investigated. The results indicate that proper sputtering power is important for obtaining GeSb₂Te₄ films with high compact structure and low surface roughness, which present good load-support capacity. Although the effect of oxygen impurity on the anti-compression properties of GeSb₂Te₄ films is not very significant as a whole, certain oxygen dosage can relax the internal stress, thereby the hardness of the films drops slightly.

基金信息：the National Natural Science Foundation of China
the Foundation for the National Excellent Doctoral Dissertation of China
the New Century Excellent Talents in University, China