Electrical characteristics and microstructures of Pr₆O₁₁-doped Bi₄Ti₃O₁₂ thin films

来源期刊：中国有色金属学报(英文版)2009年第1期

论文作者：陈敏 黄可龙 梅孝安 黄重庆 刘靖 蔡安辉

文章页码：138 - 142

Key words：ferroelectric; film; bismuth titanate; doping

Abstract: Pr₆O₁₁-doped bismuth titanate (Bi_xPr_yTi₃O₁₂, BPT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicate that all of BPT films consist of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.06 , 0.3, 1.2 and 1.5, I—E characteristics exhibit negative differential resistance behaviors and their ferroelectric hysteresis loops are characterized by large leakage current. Whereas for samples with y=0.6 and 0.9, I—E characteristics are of simple ohmic behaviors and their ferroelectric hysteresis loops are saturated and undistorted. The remanent polarization (P_r) and coercive field (E_c) of the BPT Film with y=0.9 are above 35 μC/cm² and 80 kV/cm, respectively.

基金信息：the National Natural Science Foundation of China
the Natural Science Foundation of Hunan Province, China
the Educational Science Foundation of Hunan Province, China