Growth and Characterization of GaInP Layers on GaAs Substrates by MOCVD
来源期刊：Rare Metals1993年第4期
论文作者：余庆选 彭瑞伍 励翠云 任尧成
文章页码：264 - 266
摘 要：<正> The ternary semiconductor Ga0.5In0.5Pmay be used in optoelectronics andmicrowave devices to overcome the problemssuch as the formations of DX centers andoxidation of Al that occurred frequently inAIGaAs.It can also be used as active regionsin GalnP/AlGalnP visible double
摘要：<正> The ternary semiconductor Ga0.5In0.5Pmay be used in optoelectronics andmicrowave devices to overcome the problemssuch as the formations of DX centers andoxidation of Al that occurred frequently inAIGaAs.It can also be used as active regionsin GalnP/AlGalnP visible double
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