简介概要

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

来源期刊:JOURNAL OF MATERIALS SCIENCE TECHNOLOG2017年第8期

论文作者:Juan Gao Gang He Dongqi Xiao Peng Jin Shanshan Jiang Wendong Li Shuang Liang Li Zhu

文章页码:901 - 906

摘    要:In the current work, in situ surface passivation Ge substrate by using trimethylaluminum(TMA) prior to HfTiO films deposition and electrical properties of HfTiO/Ge gate stacks have been investigated by X-ray photoelectron spectroscopy(XPS) and electrical measurements systematically. Based on analysis from XPS measurements, it has been confirmed that the interfacial layer of HfTiO/Ge gate stack has been suppressed effectively after 20 half-ALD cycles TMA pretreatment. Electrical properties of metal-oxidesemiconductor(MOS) capacitor based on HfTiO gate dielectrics have shown that the MOS capacitor with20 cycles TMA cleaning exhibits the lowest interface state density(7.56 eV-1cm-2) and the smallest leakage current(2.67 × 10-5A/cm2). Correspondingly, the leakage current conduction mechanisms for MOS capacitor device with 20 cycles TMA cleaning also have been discussed in detail.

详情信息展示

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Juan Gao1,2,Gang He1,Dongqi Xiao1,Peng Jin1,Shanshan Jiang1,Wendong Li1,Shuang Liang1,Li Zhu1

1. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University2. School of Mechanics and Optoelectric Physics, Anhui University of Science and Technology

摘 要:In the current work, in situ surface passivation Ge substrate by using trimethylaluminum(TMA) prior to HfTiO films deposition and electrical properties of HfTiO/Ge gate stacks have been investigated by X-ray photoelectron spectroscopy(XPS) and electrical measurements systematically. Based on analysis from XPS measurements, it has been confirmed that the interfacial layer of HfTiO/Ge gate stack has been suppressed effectively after 20 half-ALD cycles TMA pretreatment. Electrical properties of metal-oxidesemiconductor(MOS) capacitor based on HfTiO gate dielectrics have shown that the MOS capacitor with20 cycles TMA cleaning exhibits the lowest interface state density(7.56 eV-1cm-2) and the smallest leakage current(2.67 × 10-5A/cm2). Correspondingly, the leakage current conduction mechanisms for MOS capacitor device with 20 cycles TMA cleaning also have been discussed in detail.

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