TEM study on Si0.65Ge0.35/p-Si HIP infrared detector
来源期刊：中国有色金属学报(英文版)1999年第3期
论文作者：刘安生 邵贝羚 刘峥 王敬
文章页码：481 - 486
Key words：infrared detector; heterojunction semiconductor device; microstructure of semiconductor device; transmission electron microscopy
Abstract: Microstructure of P+-Si0.65Ge0.35/p-Si HIP infrared detector has been studied by using localization cross-section transmission electron microscopy. The photosensitive region of the detector consists of 6 P+-Si0.65Ge0.35 layers and 5 UD-Si layers, which are flat and have thickness of 6nm and 32nm, respectively. A stress field exists on the interface between Si0.65Ge0.35 and UD-Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si0.65Ge0.35 and UD-Si layers on amorphous SiO2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.
