电感耦合等离子体原子发射光谱法测定碳化硅中杂质元素

来源期刊：冶金分析2010年第7期

论文作者：姚永生

文章页码：48 - 51

关键词：电感耦合等离子体原子发射光谱法； 碳化硅； 微量元素

Key words：inductively coupled plasma atomic emission spectrometry； silicon carbide； micro elements

摘    要：提出了使用电感耦合等离子体原子发射光谱同时测定碳化硅中微量Fe、Al、Ti、Ca、Mg、P、Mn的分析方法。样品用无水碳酸钠与硼酸混合熔剂熔融,硝酸提取,甲醇除硼,氢氟酸挥硅,然后在选定的仪器工作条件下测定。使用基体匹配法来校正基体的干扰。各元素的测定检出限为0.001~0.054μg/mL,相对标准偏差(RSD,n=9)为0.5%~3.7%。经比对试验证明,本法测定值与其他方法测定值相符合。

Abstract: A method was proposed for the simultaneous determination of micro Fe,Al,Ti,Ca,Mg,P and Mn in silicon carbide by inductively coupled plasma atomic emission spectrometry.The sample was fused with the mixed fluxing agent of anhydrous sodium carbonate-boric acid,and extracted by nitric acid.The boron was removed by methanol,and silicon was removed by volatilization with hydrofluoric acid.The sample solution was determined under the selected instrumental conditions.The interference of matrix was corrected by matrix matching method.The detection limits of testing elements were 0.001-0.054 μg/mL,and the relative standard deviation (RSD,n=9) was 0.5%-3.7%.By the comparison,it was found that the results of this method were consistent with those obtained by other methods.