Improved electromigration reliability of surface acoustic wave devices using Ti/Al-Mo/Ti/Al-Mo electrodes
来源期刊：Rare Metals2009年第6期
论文作者：LI Dongmei and LIU Ming Institute of Microelectronics, Chinese Academy of Sciences, Beijing , China
文章页码：554 - 558
摘 要：In order to obtain both high electromigration （EM） reliability and fine-dimensional control in high-frequency surface acoustic wave （SAW） devices, 4-layered Ti/Al-Mo/Ti/Al-Mo electrode films were investigated on 128° Y-X LiNbO3 substrates by sputtering deposition. The results indicated that the 4-layered films had an improved EM reliability compared to conventional Al-0.5wt.%Cu films. Their lifetime is approximately three times longer than that of the Al-0.5wt.%Cu films tested at a current density of 5×107 A/cm2 and a temperature of 200°C. Moreover, the 4-layered films were easily etched in reactive ion etching and fine-dimensional control was realized during the pattern replication for high-frequency SAW devices. For the 4-layered films, an optimum Mo quantity and sputtering parameters were very significant for high EM reliability.
LI Dongmei and LIU Ming Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
摘 要：In order to obtain both high electromigration （EM） reliability and fine-dimensional control in high-frequency surface acoustic wave （SAW） devices, 4-layered Ti/Al-Mo/Ti/Al-Mo electrode films were investigated on 128° Y-X LiNbO3 substrates by sputtering deposition. The results indicated that the 4-layered films had an improved EM reliability compared to conventional Al-0.5wt.%Cu films. Their lifetime is approximately three times longer than that of the Al-0.5wt.%Cu films tested at a current density of 5×107 A/cm2 and a temperature of 200°C. Moreover, the 4-layered films were easily etched in reactive ion etching and fine-dimensional control was realized during the pattern replication for high-frequency SAW devices. For the 4-layered films, an optimum Mo quantity and sputtering parameters were very significant for high EM reliability.
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