Characteristics of the Structure and Properties of ZnSnO3 Films by Varying the Magnetron Sputtering Parameters
来源期刊：Acta Metallurgica Sinica2016年第9期
论文作者：Fa-Yu Wu Jian-Wei Li Yi Qi Wu-Tong Ding Yuan-Yuan Guo Yan-Wen Zhou
文章页码：827 - 833
摘 要：Transparent conductive oxide ZnSnO3 films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy,X-ray diffraction,transmission electron microscopy,atomic force microscopy,surface profile,UV–Vis spectroscopy,and Hall effect.The structures of the films were either amorphous or nanocrystalline depending on sputtering parameters including deposition time,target power,chamber pressure,and the target–substrate separation.The average transmittance of the ZnSnO3 films within the visible wavelength was approximately 80%and the resistivity of the ZnSnO3 films was in the range of 10-3–10-4X cm.The structural,optical,and electrical properties of the ZnSnO3 films could be adjusted and regulated by optimizing the sputtering process,allowing materials with specific properties to be designed.
Fa-Yu Wu1，Jian-Wei Li1，Yi Qi2，Wu-Tong Ding3，Yuan-Yuan Guo1，Yan-Wen Zhou1
1. Laser Advanced Manufacturing Technology Center, School of Materials and Metallurgy, University of Science and Technology Liaoning2. SINOTRUK (Hong Kong) Limited Jinan Casting and Forging Center3. School of Material Science and Engineering, Shenyang University of Technology
摘 要：Transparent conductive oxide ZnSnO3 films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy,X-ray diffraction,transmission electron microscopy,atomic force microscopy,surface profile,UV–Vis spectroscopy,and Hall effect.The structures of the films were either amorphous or nanocrystalline depending on sputtering parameters including deposition time,target power,chamber pressure,and the target–substrate separation.The average transmittance of the ZnSnO3 films within the visible wavelength was approximately 80%and the resistivity of the ZnSnO3 films was in the range of 10-3–10-4X cm.The structural,optical,and electrical properties of the ZnSnO3 films could be adjusted and regulated by optimizing the sputtering process,allowing materials with specific properties to be designed.
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