简介概要

Structure and optical characterization of GaP-SiO2 co-sputtered films

来源期刊:Rare Metals2008年第6期

论文作者:CHAI Yueshenga, b, YANG Meihuib, ZHANG Mingangb, and SUN Gangb a School of Materials Science and Engineering, Shanghai University, Shanghai , China b School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan , China

文章页码:580 - 585

摘    要:The films of GaP nanocrystals embedded in SiO2 matrix were prepared by radio frequency magnetron co-sputtering and subsequent anneal- ing technology. The structure and morphology of the films were investigated by scanning electron microscope, X-ray diffraction, and energy dispersive spectrum. Raman spectra results showed that the transverse optical phonon model (TO) and the longitudinal optical phonon model (LO) of GaP nanocrystals were both discovered to undergo red shift, broadening, and asymmetry. The red shift degree of the TO model was about 8.8 cm-1. The luminescence spectrum of the GaP/SiO2 film consisted of several emission peaks. 2.84-2.54 eV blue light emission was explained by the quantum confinement-luminescence centers model (QC-LCs).

详情信息展示

Structure and optical characterization of GaP-SiO2 co-sputtered films

CHAI Yueshenga, b, YANG Meihuib, ZHANG Mingangb, and SUN Gangb a School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China b School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, China

摘 要:The films of GaP nanocrystals embedded in SiO2 matrix were prepared by radio frequency magnetron co-sputtering and subsequent anneal- ing technology. The structure and morphology of the films were investigated by scanning electron microscope, X-ray diffraction, and energy dispersive spectrum. Raman spectra results showed that the transverse optical phonon model (TO) and the longitudinal optical phonon model (LO) of GaP nanocrystals were both discovered to undergo red shift, broadening, and asymmetry. The red shift degree of the TO model was about 8.8 cm-1. The luminescence spectrum of the GaP/SiO2 film consisted of several emission peaks. 2.84-2.54 eV blue light emission was explained by the quantum confinement-luminescence centers model (QC-LCs).

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