Abstract: The microstructure and electrical properties of annealed Cr-Si-Al and Cr-Si-Al-N films were investigated. The results show that,when sputtered amorphous Cr-Si-Al and Cr-Si-Al-N films are heated up to temperature of 700℃,they all crystallize into two phases: the nanocrystalline Cr(Al,Si)2 and Si phase. The addition of N into amorphous Cr-Si-Al films inhibits the nucleation and growth of the crystallization phase,resulting in the higher annealing temperatures for Cr-Si-Al-N films in comparison with Cr-Si-Al films to obtain a small temperature coefficient of resistance (TCR). As a result,the Cr-Si-Al-N resistive films have higher electrical stability.
基金信息:国家自然科学基金资助项目
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DOI:10.19476/j.ysxb.1004.0609.2002.04.010
氮元素对Cr-Si-Al电阻薄膜晶化行为及电性能的影响
董显平 吴建生 毛立忠
上海交通大学材料科学与工程学院教育部高温材料及高温测试重点实验室
上海交通大学材料科学与工程学院教育部高温材料及高温测试重点实验室 上海200030
摘 要:
研究了Cr Si Al和Cr Si Al N两种薄膜的微观结构及电性能。结果表明 :溅射态非晶Cr Si Al和Cr Si Al N薄膜在加热到 70 0℃的过程中 , 将析出两种晶化相 , 即Cr (Al, Si) 2 和Si微晶相 ;氮元素加至Cr Si Al非晶膜中 , 将阻碍其中晶化相的形核与长大 ;与Cr Si Al薄膜相比 , Cr Si Al N薄膜欲获得较小电阻温度系数 (TCR) 需要更高的退火温度 ;Cr Si Al N电阻膜具有更高的电学稳定性。
Effect of nitrogen on crystallization behavior and electrical properties of Cr-Si-Al resistive films
Abstract:
The microstructure and electrical properties of annealed Cr-Si-Al and Cr-Si-Al-N films were investigated. The results show that, when sputtered amorphous Cr-Si-Al and Cr-Si-Al-N films are heated up to temperature of 700?℃, they all crystallize into two phases: the nanocrystalline Cr (Al, Si) 2 and Si phase. The addition of N into amorphous Cr-Si-Al films inhibits the nucleation and growth of the crystallization phase, resulting in the higher annealing temperatures for Cr-Si-Al-N films in comparison with Cr-Si-Al films to obtain a small temperature coefficient of resistance (TCR) . As a result, the Cr-Si-Al-N resistive films have higher electrical stability.
Fig.2 Bright-field electron micrographs and area diffraction patterns of Cr-Si-Al films heated up from 350 ℃ to 450 ℃ (a) , (b) —350 ℃; (c) , (d) —400 ℃; (e) , (f) —450 ℃