电沉积金铟硒半导体薄膜上的电化学振荡现象
来源期刊：中国有色金属学报1999年第2期
论文作者：徐群杰 云大陆 邓薰南 尤金跨
文章页码：363 - 369
关键词：金铟硒 动态阻(容)抗法 电化学振荡 电沉积
Key words：gold indium selenide ; dynamic impedance and condensance method ; electrochemistry oscillation; electrodeposition
摘 要：采用现场动态阻(容)抗法对不同支持电解质溶液中电沉积金铟硒薄膜电极上阴极还原H2O2时产生的电化学振荡行为进行了研究。通过AES能谱和激光扫描电化学测试对振荡前后的电极表面组成及状况的分析发现，电化学振荡能使金铟硒半导体薄膜的光电效应减弱乃至消失，其原因是由于随着振荡的进行破坏了金铟硒的半导体结构和半导体溶液界面结构。对振荡机理的研究发现，在以KCl为支持电解质的电化学振荡体系中，由于Cl-的特性吸附和活化作用，并且在振荡过程中Cl- 参与了薄膜的组成，其阴极向扫描过程中振荡产生的极化电位区域与阳极向过程相吻合；而在以KNO3为支持电解质的振荡体系中，由于没有Cl-的特性吸附，其阴极向过程与阳极向过程中振荡产生的极化电位区域表现出一定的差异。
Abstract: The electrochemical oscillation behaviour of hydrogen peroxide cathodic reduction process on the electrodeposited gold indium selenide electrode has been studied by using in-situ dynamic impedance and condensance measurement technique in different supporting electrolyte solutions. The surface composition of AuInSe2 electrodes (before and after oscillating) was also given by AES and in-situ photoelectrochemical methods. It was discovered that the electrochemistry oscillation could decrease the photoelectric effects of AuInSe2 films and the reason was that the structure of AuInSe2 films and the interface structure between AuI nSe2 and the solution had been destroyed with the proceeding of oscillating. Last, the mechanism of oscillation on AuInSe2 electrodes was analyzed and discussed . Because of the specific adsorption and active action of Cl-, the mechanism of oscillation in the system which KCl is the supporting electrolyte is different from the mechanism of oscillation in the system which KNO3 is the supporting electrolyte.
