简介概要

Structural Morphological and Optical Properties of SnSb2S4 Thin Films Grown by Vacuum Evaporation Method

来源期刊:JOURNAL OF MATERIALS SCIENCE TECHNOLOG2014年第10期

论文作者:N.Khedmi M.Ben Rabeh M.Kanzari

文章页码:1006 - 1011

摘    要:SnSb2S4 thin films were prepared from powder by thermal evaporation under vacuum of 1.33 x 10-4 Pa(10-6 Torr)on unheated glass substrates.The effect of thickness on the structural,morphological and optical properties of SnSb2S4 thin films was investigated.Films thickness measured by interference fringes method varied from 50 to 700 nm.X-ray diffraction analysis revealed that all the SnSb2S4 films were polycrystalline in spite without heating the substrates and the crystallinity was improved with increasing film thickness.The microstructure parameters:crystallite size,strain and dislocation density were calculated.It was observed that the crystallite size increased and the crystal defects decreased with increasing film thickness.In addition,by increasing the film thickness,an enhancement in the surface roughness root-mean-square(RMS) increased from 2.0 to6.6 nm.The fundamental optical parameters like band gap,absorption and extinction coefficient were calculated in the strong absorption region of transmittance and reflectance spectrum.The optical absorption measurements indicated that the band(Eg) gap of the thin films decreased from 2.10 to 1.65 eV with increasing film thickness.The refractive indexes were evaluated in transparent region in terms of envelope method,which was suggested by Swanepoul.It was observed that the refractive index increased with increasing film thickness.

详情信息展示

Structural Morphological and Optical Properties of SnSb2S4 Thin Films Grown by Vacuum Evaporation Method

N.Khedmi1,M.Ben Rabeh1,M.Kanzari2

1. Laboratoire de Photovoltaques et Matriaux de Semi-conducteurs-ENIT-Universit de Tunis el Manar,BP 37,le belvedere,1002 Tunis,Tunisie2. Laboratoire de Photovoltaques et Matriaux de Semi-conducteurs-ENIT-IPEITunis Montfleury-Universit de Tunis,Tunisie

摘 要:SnSb2S4 thin films were prepared from powder by thermal evaporation under vacuum of 1.33 x 10-4 Pa(10-6 Torr)on unheated glass substrates.The effect of thickness on the structural,morphological and optical properties of SnSb2S4 thin films was investigated.Films thickness measured by interference fringes method varied from 50 to 700 nm.X-ray diffraction analysis revealed that all the SnSb2S4 films were polycrystalline in spite without heating the substrates and the crystallinity was improved with increasing film thickness.The microstructure parameters:crystallite size,strain and dislocation density were calculated.It was observed that the crystallite size increased and the crystal defects decreased with increasing film thickness.In addition,by increasing the film thickness,an enhancement in the surface roughness root-mean-square(RMS) increased from 2.0 to6.6 nm.The fundamental optical parameters like band gap,absorption and extinction coefficient were calculated in the strong absorption region of transmittance and reflectance spectrum.The optical absorption measurements indicated that the band(Eg) gap of the thin films decreased from 2.10 to 1.65 eV with increasing film thickness.The refractive indexes were evaluated in transparent region in terms of envelope method,which was suggested by Swanepoul.It was observed that the refractive index increased with increasing film thickness.

关键词:

<上一页 1 下一页 >

相关论文

  • 暂无!

相关知识点

  • 暂无!

有色金属在线官网  |   会议  |   在线投稿  |   购买纸书  |   科技图书馆

中南大学出版社 技术支持 版权声明   电话:0731-88830515 88830516   传真:0731-88710482   Email:administrator@cnnmol.com

互联网出版许可证:(署)网出证(京)字第342号   京ICP备17050991号-6      京公网安备11010802042557号