Spectroscopic Understanding of Structural and Electrical Property Variations in Dopant-Free ZnO Films
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2017年第6期
论文作者：Hyegyeong Kim JiWoong Kim Dooyong Lee Won-Jae Lee Jong-Seong Bae Jaekwang Lee Sungkyun Park
文章页码：523 - 526
摘 要：Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical（structural, electrical） and chemical properties: The crystallinity of ZnO films is closely related to ZnO bonding, whereas carrier concentration is associated with VO（oxygen vacancy）.
Hyegyeong Kim1，JiWoong Kim1，Dooyong Lee1，Won-Jae Lee2，Jong-Seong Bae3，Jaekwang Lee1，Sungkyun Park1
1. Department of Physics, Pusan National University2. Department of Nano Engineering & Electronic Research Center, Dong-Eui University3. Busan Center, Korea Basic Science Institute
摘 要：Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical（structural, electrical） and chemical properties: The crystallinity of ZnO films is closely related to ZnO bonding, whereas carrier concentration is associated with VO（oxygen vacancy）.
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