Cellular automata modelling of phase-change memories

Wanhua Yu1) and David Wright2) 1) School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China 2) School of Engineering, Computer Science and Mathematics, The University of Exeter, Exeter, EX4 4QF, UK

摘 要：A novel approach to modelling phase-transition processes in phase change materials used for optical and electrical data storage applications is presented. The model is based on a cellular automaton （CA） approach to predict crystallization behaviour that is linked to thermal and electrical simulations to enable the study of the data writing and erasing processes. The CA approach is shown to be able to predict the evolution of the microstructure during the rapid heating and cooling cycles pertinent to data storage technology, and maps crystallization behaviour on the nanoscale. A simple example based on possible future nonvolatile phase-change random access solid-state memory is presented.

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