Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Hu Guoxin Wang Cuimei Wang Junxi Wang Xiaoliang Fang Cebao Li Jinmin
Key words：MOCVD; GaN; resistivity; TSC;
Abstract: High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.
Hu Guoxin1，Wang Cuimei1，Wang Junxi1，Wang Xiaoliang1，Fang Cebao1，Li Jinmin1
(1.Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
Abstract:High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.
Key words:MOCVD; GaN; resistivity; TSC;
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