Determination and Analysis of Optical Constant of Annealed Sn2Sb2S5 Thin Films
来源期刊：Acta Metallurgica Sinica2015年第5期
论文作者：Yousra Fadhli Adel Rabhi Mounir Kanzari
文章页码：656 - 662
摘 要：The effects of annealing on structural, optical and electrical properties of Sn2Sb2S5 thin films were studied.Sn2Sb2S5 thin films were deposited on no-heated glass substrates by single source vacuum evaporation method. The asdeposited films were annealed in air for 1 h at 100, 200 and 300 °C. XRD study shows that annealed films are crystallized according to the preferential orientation（602）. Optical measurements show that the thin films have relatively high absorption coefficients in the range of 105–106cm-1in the energy range of 2–3.25 e V. It is also found that Sn2Sb2S5 exhibit two optical direct transitions. The models of Wemple–Di Domenico and Spitzer–Fan were applied for the analysis of the dispersion of the refractive index and the determination of the optical and dielectric constants. The electrical resistivity measurements are recorded, and two activation energy values are determined. The layers annealed at 200 and300 °C exhibit a resistive hysteresis behavior. The properties reported here offer perspective to Sn2Sb2S5 for its application in many advanced technologies.
Yousra Fadhli，Adel Rabhi，Mounir Kanzari
摘 要：The effects of annealing on structural, optical and electrical properties of Sn2Sb2S5 thin films were studied.Sn2Sb2S5 thin films were deposited on no-heated glass substrates by single source vacuum evaporation method. The asdeposited films were annealed in air for 1 h at 100, 200 and 300 °C. XRD study shows that annealed films are crystallized according to the preferential orientation（602）. Optical measurements show that the thin films have relatively high absorption coefficients in the range of 105–106cm-1in the energy range of 2–3.25 e V. It is also found that Sn2Sb2S5 exhibit two optical direct transitions. The models of Wemple–Di Domenico and Spitzer–Fan were applied for the analysis of the dispersion of the refractive index and the determination of the optical and dielectric constants. The electrical resistivity measurements are recorded, and two activation energy values are determined. The layers annealed at 200 and300 °C exhibit a resistive hysteresis behavior. The properties reported here offer perspective to Sn2Sb2S5 for its application in many advanced technologies.
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