Characteristics of Si⁺/B⁺ dual implanted silicon wafers

À´Ô´ÆÚ¿¯£ºÖйúÓÐÉ«½ðÊôѧ±¨(Ó¢ÎÄ°æ)2001ÄêµÚ5ÆÚ

ÂÛÎÄ×÷ÕߣºÖܼ̳Р»Æ²®ÔÆ

ÎÄÕÂÒ³Â룺753 - 755

Key words£ºrapid thermal annealing; dual ion implantation; silicon thin p⁺ layers

Abstract: Thin p⁺ layers with good electrical properties were fabricated by RTA (rapid thermal annealing) with post-FA (furance annealing) of Si⁺/B⁺ dual implanted silicon wafers. The electrical and structural characteristics of thin p⁺ layers have been measured by FPP (four-point probe), SRP (spreading resistance probe), RBS/channelling. Optimizing the implantation and annealing processes, especially using the thermal cycle of RTA followed by FA, shallow p⁺n junctions can be fabricated, which shows excellent I-V characteristics with reversª²bias leakage current densities of 1.8nA/cm²ªªat -1.4V.