Improvement on the interface properties of p-GaAs/n-InP heterojunction for wafer bonded four-junction solar cells
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2019年第3期
论文作者：Mengyan Zhang Tao Ning Jie Chen Lijie Sun Lihua Zhou
文章页码：330 - 333
摘 要：The p-GaAs/n-InP heterojunction was fabricated by direct wafer bonding technology. The optimized atomic level contact between GaAs and InP is critical for getting good ohmic contact and removing the bubbles or voids at the interface, which is helpful to enhance the efficiency of wafer bonded multi-junction solar cells. Through the surface megasonic cleaning and the plasma treatment, we have achieved the high quality bonding interface without bubbles or voids and with interface resistivity of about 0.1 ohms/cm2. A GaInP/GaAs//InGaAsP/InGaAs 4-junction solar cell was prepared with the high efficiency of 34.4%（AM0）at 1 sun.
Mengyan Zhang1,2，Tao Ning3，Jie Chen2，Lijie Sun2，Lihua Zhou2
1. Department of Electronic Engineering, Institute of Information Science and Technology, East China Normal University2. State Key Laboratory of Space Power Technology, Shanghai Institute of Space Power Sources3. School of Advanced Materials and Nanotechnology, Xidian University
摘 要：The p-GaAs/n-InP heterojunction was fabricated by direct wafer bonding technology. The optimized atomic level contact between GaAs and InP is critical for getting good ohmic contact and removing the bubbles or voids at the interface, which is helpful to enhance the efficiency of wafer bonded multi-junction solar cells. Through the surface megasonic cleaning and the plasma treatment, we have achieved the high quality bonding interface without bubbles or voids and with interface resistivity of about 0.1 ohms/cm2. A GaInP/GaAs//InGaAsP/InGaAs 4-junction solar cell was prepared with the high efficiency of 34.4%（AM0）at 1 sun.
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