Effects of thermal transport properties on temperature distribution within silicon wafer
来源期刊：中南大学学报(英文版)2014年第4期
论文作者：WANG Ai-hua(王爱华) NIU Yi-hong(牛义红) CHEN Tie-jun(陈铁军) P. F. HSU
文章页码：1402 - 1410
Key words：silicon wafer; thermal transport properties; temperature distribution; radiation heat transfer
Abstract: A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level.
WANG Ai-hua(王爱华)1, NIU Yi-hong(牛义红)1, CHEN Tie-jun(陈铁军)1, P. F. HSU2
(1. School of Materials and Metallurgy, Northeastern University, Shenyang 110819, China;
2. Department of Mechanical and Aerospace Engineering, Florida Institute of Technology, Florida 32901, USA)
Abstract:A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level.
Key words:silicon wafer; thermal transport properties; temperature distribution; radiation heat transfer
