Morphology Structure and Electrical Properties of NiCr Thin Film Grown on the Substrate of Silicon Prepared by Magnetron Sputtering
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2015年第2期
论文作者：沈必舟 PENG Liping WANG Xuemin 韦建军 吴卫东
文章页码：380 - 385
摘 要：NiCr micron-resistor was designed and prepared by magnetron sputtering and lithography on the substrate of silicon with different powers. It is found that there exists a big gap in the TCR between the annealed group and the un-annealed group. A series of tests were made to figure out the reasons lying behind the gap in the TCR between the annealed group and the un-annealed group. UV reflection results show that there is no increase in the concentration of free electrons after annealing. However, the data obtained from XRD reveal that the annealing does not have an obvious influence on the strain of thin films, but really increases the grain size of thin films. Therefore, the grain boundary scattering plays a dominant role in explaining the obvious difference in the TCR. Finally through appropriate methods, a micron-resistor for heating-up with a low TCR value was obtained.
沈必舟1，PENG Liping2，WANG Xuemin2，韦建军1，吴卫东2
1. Atomic and Molecular Physics Institute, Sichuan University2. Science and Technology on Plasma Physics Laboratory Research center of Laser Fusion CAEP
摘 要：NiCr micron-resistor was designed and prepared by magnetron sputtering and lithography on the substrate of silicon with different powers. It is found that there exists a big gap in the TCR between the annealed group and the un-annealed group. A series of tests were made to figure out the reasons lying behind the gap in the TCR between the annealed group and the un-annealed group. UV reflection results show that there is no increase in the concentration of free electrons after annealing. However, the data obtained from XRD reveal that the annealing does not have an obvious influence on the strain of thin films, but really increases the grain size of thin films. Therefore, the grain boundary scattering plays a dominant role in explaining the obvious difference in the TCR. Finally through appropriate methods, a micron-resistor for heating-up with a low TCR value was obtained.
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