Advances in Rare Earth Application to Semiconductor Materials and Devices
来源期刊：JOURNAL OF RARE EARTHS2004年第5期
论文作者：屠海令
Key words：semiconductor; materials; devices; application; rare earths;
Abstract: The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED) and display materials are described. The various technologies of incorporating RE into semiconductor materials and devices are presented. The RE high dielectric materials, RE silicides and the phase transition of RE materials are also discussed. Finally, the paper describes the prospects of the RE application to semiconductor industry.
屠海令1
(1.National Engineering Research Center for Semiconductor Materials, General Research Institute for Nonferrous Metals,Beijing,100088,China)
Abstract:The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED) and display materials are described. The various technologies of incorporating RE into semiconductor materials and devices are presented. The RE high dielectric materials, RE silicides and the phase transition of RE materials are also discussed. Finally, the paper describes the prospects of the RE application to semiconductor industry.
Key words:semiconductor; materials; devices; application; rare earths;
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