Transport Properties of the Tunnel Junctions Al1-xCox/{Al1-xCox-oxide}/Al
来源期刊：材料科学与工程学报2000年增刊第1期
论文作者：T.Miyazaki N.Tezuka Y.Ando H.Kubota J.Murai X.F.Han Q.Y.Wang
摘 要：The oxides of Al1-xCox (x=0,0.25,0.5,0.75, and 1.0) alloys were chosen as barrier materials in this work. The tunnel junction consists of the bottom electrode Al1-xCox and the top electrode Al with an insulating layer { Al1-xCox-oxide} which was formed by natural oxidation in a baking-box at 333K. The oxidation time for forming an Al1-xCox-oxide layer on the surface of the bottom Al1-xCox layers were optimized.The resistance of Al1-xCox/{ Al1-xCox-oxide}/Al tunnel junctions varied between 101 and 106 Ω measured at 1 my and 4.2 K. The effective barrier height and width of insulating layers Al1-xCox-oxide ( x=0.25, 0.5, and 0.75 )varied between 0.6 and 2.7 eV and between 1.3 and 2.1 nm. It is shown that the thin oxide layer of Al1-xCox alloys can be chosen as barrier materials.
T.Miyazaki1，N.Tezuka1，Y.Ando1，H.Kubota1，J.Murai1，X.F.Han1，Q.Y.Wang1
(1.Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai, Japan Material Science Center, Institute of Semiconductors, CAS, Beijing 100083, China)
摘要:The oxides of Al1-xCox (x=0,0.25,0.5,0.75, and 1.0) alloys were chosen as barrier materials in this work. The tunnel junction consists of the bottom electrode Al1-xCox and the top electrode Al with an insulating layer { Al1-xCox-oxide} which was formed by natural oxidation in a baking-box at 333K. The oxidation time for forming an Al1-xCox-oxide layer on the surface of the bottom Al1-xCox layers were optimized.The resistance of Al1-xCox/{ Al1-xCox-oxide}/Al tunnel junctions varied between 101 and 106 Ω measured at 1 my and 4.2 K. The effective barrier height and width of insulating layers Al1-xCox-oxide ( x=0.25, 0.5, and 0.75 )varied between 0.6 and 2.7 eV and between 1.3 and 2.1 nm. It is shown that the thin oxide layer of Al1-xCox alloys can be chosen as barrier materials.
【全文内容正在添加中】
