Annealing Effect of ZnO on the Performance of Inverted Organic Photovoltaic Devices
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2014年第2期
论文作者：Wenjing Qin Guojing Ding Xinrui Xu Liying Yang Shougen Yin
文章页码：197 - 202
摘 要：ZnO nanoparticles films were prepared via sol-gel process and incorporated into inverted organic photovoltaic devices with a structure of ITO/ZnO/P3HT:PCBM/MoO3/Ag,in which ZnO film served as an electron selective layer.The effects of annealing temperature of ZnO film on the device performance were investigated.When the annealing temperature was 300 ℃,a well-arranged ZnO thin film was obtained,and the optimized device had doubled short circuit current density(JSC) and seven-fold higher power conversion efficiency（PCE）compared to the devices without ZnO film.This improvement could be attributed to the enlarged interfacial area of ZnO/active layer and better energy band matching which causes an efficient electron extraction and a decreased interface energy barrier.At particularly high annealing temperature,dramatically increased sheet resistance of indium tin oxide（ITO） was found to cause PCE deterioration.Our finding indicates that it is highly important to investigate both morphology and electrical effects for understanding and optimizing organic photovoltaic（OPV） performance.
Wenjing Qin1,2，Guojing Ding1,2，Xinrui Xu1,2，Liying Yang1,2，Shougen Yin1,2
1. Key Laboratory of Display Materials & Photoelectric Devices(Ministry of Education) and School of Materials Science &Engineering,Tianjin University of Technology
摘 要：ZnO nanoparticles films were prepared via sol-gel process and incorporated into inverted organic photovoltaic devices with a structure of ITO/ZnO/P3HT:PCBM/MoO3/Ag,in which ZnO film served as an electron selective layer.The effects of annealing temperature of ZnO film on the device performance were investigated.When the annealing temperature was 300 ℃,a well-arranged ZnO thin film was obtained,and the optimized device had doubled short circuit current density(JSC) and seven-fold higher power conversion efficiency（PCE）compared to the devices without ZnO film.This improvement could be attributed to the enlarged interfacial area of ZnO/active layer and better energy band matching which causes an efficient electron extraction and a decreased interface energy barrier.At particularly high annealing temperature,dramatically increased sheet resistance of indium tin oxide（ITO） was found to cause PCE deterioration.Our finding indicates that it is highly important to investigate both morphology and electrical effects for understanding and optimizing organic photovoltaic（OPV） performance.
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