Ti-Si-N films prepared by magnetron sputtering
来源期刊：Rare Metals2012年第2期
论文作者：PAN Li a, b , BAI Yizhen a , ZHANG Dong a , and WANG Jian a a Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian , China b PLA No. Factory, Nanjing , China
文章页码：183 - 188
摘 要：A film growth mechanism, expressed in terms of depositing hard films onto the soft substrate, was proposed. Multicomponent thin films of Ti-Si-N were deposited onto Al substrate with a double-target magnetron sputtering system in an Ar-N 2 gas mixture. The Ti-Si-N films were investigated by characterization techniques such as X-ray diffraction （XRD）, atomic force microscope （AFM）, electron probe microanalyzer （EPMA）, scratch test and nanoindentation. The as-deposited films have a good adhesion to Al substrate and appear with smooth and lustrous surface. The films show nanocomposite structure with nano TiN grains embedded in an amorphous SiN x matrix. The maximum hardness of the films was achieved as high as 27 GPa. The influences of the N 2 flow rate and substrate temperature on the growth rate and quality of the films were also discussed. For all samples, the Ar flow rate was maintained constant at 10 ml min 1 , while the flow rate of N 2 was varied to analyze the structural changes related to chemical composition and friction coefficient. The low temperature in the deposited Ti-Si-N films favors the formation of crystalline TiN, and it leads to a lower hardness at low N 2 flow rate. At the same time, the thin films deposited are all crystallized well and bonded firmly to Al substrate, with smooth and lustrous appearance and high hardness provided. The results indicate that magnetron sputtering is a promising method to deposit hard films onto soft substrate.
PAN Li a, b , BAI Yizhen a , ZHANG Dong a , and WANG Jian a a Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China b PLA No. 5311 Factory, Nanjing 211100, China
摘 要：A film growth mechanism, expressed in terms of depositing hard films onto the soft substrate, was proposed. Multicomponent thin films of Ti-Si-N were deposited onto Al substrate with a double-target magnetron sputtering system in an Ar-N 2 gas mixture. The Ti-Si-N films were investigated by characterization techniques such as X-ray diffraction （XRD）, atomic force microscope （AFM）, electron probe microanalyzer （EPMA）, scratch test and nanoindentation. The as-deposited films have a good adhesion to Al substrate and appear with smooth and lustrous surface. The films show nanocomposite structure with nano TiN grains embedded in an amorphous SiN x matrix. The maximum hardness of the films was achieved as high as 27 GPa. The influences of the N 2 flow rate and substrate temperature on the growth rate and quality of the films were also discussed. For all samples, the Ar flow rate was maintained constant at 10 ml min 1 , while the flow rate of N 2 was varied to analyze the structural changes related to chemical composition and friction coefficient. The low temperature in the deposited Ti-Si-N films favors the formation of crystalline TiN, and it leads to a lower hardness at low N 2 flow rate. At the same time, the thin films deposited are all crystallized well and bonded firmly to Al substrate, with smooth and lustrous appearance and high hardness provided. The results indicate that magnetron sputtering is a promising method to deposit hard films onto soft substrate.
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