Pressure infiltrated Cu/diamond composites for LED applications
来源期刊：Rare Metals2011年第2期
论文作者：FAN Yeming a,GUO Hong a,XU Jun a,CHU Ke a,ZHU Xuexin a,JIA Chengchang b,YIN Fazhang a,and ZHANG Ximin a a Nonferrous Metal Processing Division,General Research Institute for Nonferrous Metals,Beijing ,China b Institute of Powder Metallurgy,University of Science and Technology Beijing,Beijing ,China
文章页码：206 - 210
摘 要：Diamond reinforced copper （Cu/diamond） composites were prepared by a pressure infiltration technique.The composites show a super high conductivity of 713 W m-1 K-1 in combination with an extremely low coefficient of thermal expansion （CTE） of 7.72 × 10-6 K-1 （25-100 ℃）,which are achieved by modifying the copper matrix with adding 0.3 wt.% of boron to get a good thermal contact between the matrix and the diamond particles.By adopting a series of postmachining techniques the composites were made into near-net-shape parts,and an electroless silver coating was also successfully plated on the composites.Finally,their potential applications in the thermal management of light emitting diodes （LED） were illustrated via prototype examples.
摘要：Diamond reinforced copper （Cu/diamond） composites were prepared by a pressure infiltration technique.The composites show a super high conductivity of 713 W m-1 K-1 in combination with an extremely low coefficient of thermal expansion （CTE） of 7.72 × 10-6 K-1 （25-100 ℃）,which are achieved by modifying the copper matrix with adding 0.3 wt.% of boron to get a good thermal contact between the matrix and the diamond particles.By adopting a series of postmachining techniques the composites were made into near-net-shape parts,and an electroless silver coating was also successfully plated on the composites.Finally,their potential applications in the thermal management of light emitting diodes （LED） were illustrated via prototype examples.
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