Difference in electron-and gamma-irradiation effects on output characteristic of color CMOS digital image sensors
来源期刊：Rare Metals2004年第2期
论文作者：MENG Xiangti;KANG Aiguo;ZHANG Ximin;LI Jihong;HUANG Qiang;LI Fengmei;LIU Xiaoguang;and ZHOU Hongyu Institute of Nuclear Energy Technology, Tsinghua University, Beijing , China Institutt of Low Energy Nuclear Physics, Beijing Normal University, Beijing , China
文章页码：165 - 170
摘 要：<正> Changes of the average brightness and non-uniformity of dark output images, and quality of pictures capturedunder natural lighting for the cotor CMOS digital image sensors irradiated at different electron doses have been studied incomparison to those from the γ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obvi-ously and a small bright region on the dark image appears at the dose of 0.4 kGy The average brightness inereases at 0.4kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy, showing the sensor undergoes severe pen-formance degradation. Electron radiation damage is much more severe than γ radiation damage for the CMOS image sen-sors. A possible explanation is presented in this paper.
MENG Xiangti;KANG Aiguo;ZHANG Ximin;LI Jihong;HUANG Qiang;LI Fengmei;LIU Xiaoguang;and ZHOU Hongyu Institute of Nuclear Energy Technology, Tsinghua University, Beijing 100084, China Institutt of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875, China
摘 要：<正> Changes of the average brightness and non-uniformity of dark output images, and quality of pictures capturedunder natural lighting for the cotor CMOS digital image sensors irradiated at different electron doses have been studied incomparison to those from the γ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obvi-ously and a small bright region on the dark image appears at the dose of 0.4 kGy The average brightness inereases at 0.4kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy, showing the sensor undergoes severe pen-formance degradation. Electron radiation damage is much more severe than γ radiation damage for the CMOS image sen-sors. A possible explanation is presented in this paper.
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