射频负偏压与放电电流对c-BN薄膜形成的影响

来源期刊：中国有色金属学报1999年第3期

论文作者：田晶泽 夏立芳

文章页码：469 - 473

关键词：立方氮化硼；薄膜成形；活性反应蒸发

Key words：cubic boron nitride；films forming, active reaction evaporation

摘    要：用ARE(Active Reaction Evaporation)装置，在N₂/Ar混合等离子体弧光放电气氛下，通过电子束蒸镀纯硼，同时伴以一定能量的正离子轰击生长的膜表面的方法，在单晶硅(100)基片上成功地合成了立方氮化硼(Cubic Boron Nitride，简称c-BN)薄膜，并对基片射频自偏压和等离子体弧光放电电流对c-BN 膜形成的影响进行了研究。用富立叶变换红外(FTIR)透射谱和AES对沉积的膜进行相结构和化学成分分析。FTIR透射谱表明，在波数约1060cm-1处，存在很强的c-BN的吸收峰。随基片所加射频负偏压及等离子体弧光放电电流的增大，膜中的c-BN含量增大；当射频偏压为-200 V，放电电流为15 A时，沉积的膜为单相c-BN膜。AES的成分深度分布表明，c-BN膜中的B，N接近等原子比。

Abstract: c-BN films were deposited on single crystal Si(100) substrates using active reaction evaporation(ARE) technique， in which pure boron was evaporated by electronic beam，the growing film was simultaneously bombarded by energetic ions in radio frequency plasma discharge of nitrogen and argon. The films were characterized using fourier transform inferred (FTIR) spectra and AES. FTIR spectra showed a strong absorption peak around 1060 cm^-1 indicating the formation of c-BN. The amount of c-BN in film increased with increase in radio frequency bias voltage and discharge current . Nearly pure c-BN film formed at radio frequency self-bias of -200V and discharge current of 15A. AES concentration depth profile showed a nearly stoichiometric BN film .