Solution-processed,flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot heterostructures
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2021年第9期
论文作者：Jinming Hu Shengyi Yang Zhenheng Zhang Zhenheng Zhang Chandrasekar Perumal Veeramalai Muhammad Sulaman Muhammad Imran Saleem Yi Tang Yurong Jiang Libin Tang Bingsuo Zou
文章页码：216 - 226
摘 要：Due to their promising applications in foldable displays,optical communication equipment and environmental monitoring systems,flexible and broadband optoelectronic devices have gained extensive attention in recent years.Here,a flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot（QD） heterostructures is firstly presented.The integrated QD heterostructures possess consecutive detection range from ultraviolet（UV） to long-wave length infrared（LW-IR） regions with efficient light absorption and chemical stability,in comparison with the pristine PbSe QDs.Systematic material characterizations reveal the improved exciton dissociation,carrier transport and carrier lifetime of the QD heterostructures.Flexible photodetector Ag/CsPbBr3/PbSe/Ag demonstrate a high responsivity of 7.17 A/W with a specific detectivity of 8.97 × 1012 Jones under 25 μW/cm2 365 nm illumination at 5 V.Furthermore,it could maintain 91.2 %（or 94.9 %） of its initial performance even after bending for thousands of times（or exposing in ambient air for 4 weeks）.More importantly,its re s ponse time is shortened more than three orders of magnitude as that of pristine PbSe QDs-based photodetectors.Therefore,it provides a feasible and promising method for the next-generation high-performance broadband photodetectors via constructing heterostructures of various QDs.
Jinming Hu1,2，Shengyi Yang1,2,3，Zhenheng Zhang1,2，Hailong Li1,2，Chandrasekar Perumal Veeramalai1,2，Muhammad Sulaman1,2,4，Muhammad Imran Saleem1,2，Yi Tang4，Yurong Jiang4，Libin Tang3，Bingsuo Zou5
1. Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology2. Key Laboratory of Advanced Optoelectronic Quantum Design and Measurement, Ministry of Education, Beijing Institute of Technology3. Kunming Institute of Physics4. Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, School of Optics and Photonics, Beijing Institute of Technology5. MOE Key Lab of New Processing Technology for Nonferrous Metals and Materials and Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials, School of Physical Science and Technology, Guangxi University
摘 要：Due to their promising applications in foldable displays,optical communication equipment and environmental monitoring systems,flexible and broadband optoelectronic devices have gained extensive attention in recent years.Here,a flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot（QD） heterostructures is firstly presented.The integrated QD heterostructures possess consecutive detection range from ultraviolet（UV） to long-wave length infrared（LW-IR） regions with efficient light absorption and chemical stability,in comparison with the pristine PbSe QDs.Systematic material characterizations reveal the improved exciton dissociation,carrier transport and carrier lifetime of the QD heterostructures.Flexible photodetector Ag/CsPbBr3/PbSe/Ag demonstrate a high responsivity of 7.17 A/W with a specific detectivity of 8.97 × 1012 Jones under 25 μW/cm2 365 nm illumination at 5 V.Furthermore,it could maintain 91.2 %（or 94.9 %） of its initial performance even after bending for thousands of times（or exposing in ambient air for 4 weeks）.More importantly,its re s ponse time is shortened more than three orders of magnitude as that of pristine PbSe QDs-based photodetectors.Therefore,it provides a feasible and promising method for the next-generation high-performance broadband photodetectors via constructing heterostructures of various QDs.
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