Effects of argon gas flow rate and guide shell on oxygen concentration in Czochralski silicon growth
来源期刊：Rare Metals2006年第1期
论文作者：REN Bingyan ZHAOLong,ZHAO Xiuling, WANG Huixian, CAO Zhongqian, ZHU Huimin,and FU Hongbo School of Material Science and Engineering, Hebei University of Technology, Tianjin , China Hebei Ningjin Jinglong Semiconductor Factory, Ningjin , China Yunnan Semiconductor Device Factory, Kunming , China
文章页码：7 - 10
摘 要：<正>φ200 mm silicon single crystals were grown in the φ450 mm hot zone of a Czochralski (CZ) furnace. By modifying the pattern and the velocity of the argon flow, the silicon single crystals with different oxygen concentrations were obtained. Through numerical simulation, the velocity of the argon gas flow was plotted for the first time. The experiment results were analyzed and the optimum condition of the argon flow with the lowest oxygen concentration was obtained.
REN Bingyan ZHAOLong,ZHAO Xiuling, WANG Huixian, CAO Zhongqian, ZHU Huimin,and FU Hongbo School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China Hebei Ningjin Jinglong Semiconductor Factory, Ningjin 055550, China Yunnan Semiconductor Device Factory, Kunming 650033, China
摘 要：<正>φ200 mm silicon single crystals were grown in the φ450 mm hot zone of a Czochralski (CZ) furnace. By modifying the pattern and the velocity of the argon flow, the silicon single crystals with different oxygen concentrations were obtained. Through numerical simulation, the velocity of the argon gas flow was plotted for the first time. The experiment results were analyzed and the optimum condition of the argon flow with the lowest oxygen concentration was obtained.
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