LASER LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATES
来源期刊：Acta Metallurgica Sinica2001年第6期
论文作者：B.Shen Y.P.Wang X.Q.Xiu Y.D.Zheng Z.G.Liu Y.Shi R.Zhang S.L.Gu J.Xu
Key words：GaN; lift-off; freestanding; photoluminescence; X-ray diffrac tion; atomic force microscopy;
Abstract: Gallium Nitride film was successfully separated from sapphire substrate by laser radi-ation. The absorption of the 248nm radiation by the GaN at the interface results inrapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas.The substrate can be easily removed by heating above the Ga melting point (29℃).X-ray diffraction, atomic force microscopy and Photoluminescence of GaN before andafter lift-off process have been performed, which demonstrated that the separation andtransfer process do not alter the structural quality of the GaN films. And further dis-cussions on the threshold energy and crack-free strategies of laser lift-off process havealso been presented.
B.Shen1，Y.P.Wang1，X.Q.Xiu1，Y.D.Zheng1，Z.G.Liu1，Y.Shi1，R.Zhang1，S.L.Gu1，J.Xu1
(1.Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University. Nan1ing 210093, China)
Abstract:Gallium Nitride film was successfully separated from sapphire substrate by laser radi-ation. The absorption of the 248nm radiation by the GaN at the interface results inrapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas.The substrate can be easily removed by heating above the Ga melting point (29℃).X-ray diffraction, atomic force microscopy and Photoluminescence of GaN before andafter lift-off process have been performed, which demonstrated that the separation andtransfer process do not alter the structural quality of the GaN films. And further dis-cussions on the threshold energy and crack-free strategies of laser lift-off process havealso been presented.
Key words:GaN; lift-off; freestanding; photoluminescence; X-ray diffrac tion; atomic force microscopy;
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