Effect of ion implantation upon erosion resistance of polyimide films in space environment

来源期刊:中国有色金属学报(英文版)2006年第z1期

论文作者:多树旺 李美栓 周延春

文章页码:661 - 664

Key words:atomic oxygen; ion implantation; surface modification; polyamide; erosion resistance

Abstract: The atomic oxygen (AO) resistance of Si ion implanted polyimide films in the ground-based AO simulation facility was investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results show that at the initial stage of AO exposure the implanted sample has a small mass change, and then is stabilized. The erosion yield of the implanted polyimide film decreases by about two orders of magnitude compared with that of the polyimide film. The analysis through XPS and AES indicates that a continuous high-quality protective oxide-based (SiO2) surface layer is formed on the implanted polyimide films after the AO exposure. It can provide high-quality erosion protection for these materials. The implanted polyimide fully restores its original color and the carbonization effect disappears on the whole after AO exposure. Thermal-optical properties and surface morphology of the implanted polyimide materials are not altered. The modified materials have a markedly increased erosion resistance in AO environment.

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