Abstract: The epitaxy technology of gallium nitride （GaN） based high brightness blue light emitting diode （HB-LED） materials grown by metal organic vapor phase epitaxy （MOVPE） was studied. The InxGa1-xN/GaN multiple-quantum-wells （MQWs） embedded epitaxial materials were characterized by high-resolution X-ray diffraction （HR-XRD）, temperature dependent photoluminescence （TD-PL） spectra and injection dependent electroluminescence （ID-EL） spectra, respectively. The HR-XRD and TD-PL results indicate that the HB-LED epitaxial wafers have excellent crystal quality with abrupt heterostructure interfaces. The blue-shift of the emission peak wavelength is less than 1 nm as the injection current varies from 2 mA to 120 mA, and the full width at half maximum （FWHM） of the electroluminescence spectrum at 20 mA is only 18 nm. These data are among the best results reported so far. Secondly, we discussed our work on dry etching of GaN related materials by inductively coupled plasma （ICP）. For nonselective etching of AlGaN/GaN heterostructure, the root-mean-square （RMS） surface roughness of the etched sample measured by atomic force microscope （AFM） is only 0.85 nm. On the other hand, we have demonstrated selectivity as high as 60 for AlGaN over GaN.
High performance gallium nitride based blue light emitting diode material epitaxy and dry etching fabrication technology
Abstract：
The epitaxy technology of gallium nitride (GaN) based high brightness blue light emitting diode (HB-LED) materials grown by metal organic vapor phase epitaxy (MOVPE) was studied. The InxGa1-xN/GaN multiple-quantum-wells (MQWs) embedded epitaxial materials were characterized by high-resolution X-ray diffraction (HR-XRD) , temperature dependent photoluminescence (TD-PL) spectra and injection dependent electroluminescence (ID-EL) spectra, respectively. The HR-XRD and TD-PL results indicate that the HB-LED epitaxial wafers have excellent crystal quality with abrupt heterostructure interfaces. The blue-shift of the emission peak wavelength is less than 1 nm as the injection current varies from 2 mA to 120 mA, and the full width at half maximum (FWHM) of the electroluminescence spectrum at 20 mA is only 18 nm. These data are among the best results reported so far. Secondly, we discussed our work on dry etching of GaN related materials by inductively coupled plasma (ICP) . For nonselective etching of AlGaN/GaN heterostructure, the root-mean-square (RMS) surface roughness of the etched sample measured by atomic force microscope (AFM) is only 0.85 nm. On the other hand, we have demonstrated selectivity as high as 60 for AlGaN over GaN.
