Diagnosis of gas phase near the substrate surface in diamond film deposition by high-power DC arc plasma jet CVD

Zuyuan Zhou, Guangchao Chen, Bin Li, Weizhong Tang, and Fanxiu Lv 1) Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China 2) Metallurgical and Ecological Engineering School, University of Science and Technology Beijing, Beijing 100083, China

摘 要：Optical emission spectroscopy （OES） was used to study the gas phase composition near the substrate surface during dia-mond deposition by high-power DC arc plasma jet chemical vapor deposition （CVD）. C2 radical was determined as the main carbon radical in this plasma atmosphere. The deposition parameters, such as substrate temperature, anode-substrate distance, methane con-centration, and gas flow rate, were inspected to find out the influence on the gas phase. A strong dependence of the concentrations and distribution of radicals on substrate temperature was confirmed by the design of experiments （DOE）. An explanation for this de-pendence could be that radicals near the substrate surface may have additional ionization or dissociation and also have recombination, or are consumed on the substrate surface where chemical reactions occur.

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