Hazy Backside Gettering with a-Si: H Film
来源期刊：Rare Metals1993年第1期
论文作者：王锻强 孙茂友 翟富义 李美英 尤重远
文章页码：5 - 8
摘 要：<正> Hazy backside gettering of boron-doped <111> siljcon wafer with a-Si: H film deposited by rf glowdischarge technique （rf-GD） has been investigated by SEM, optical microscope and preferential etching tech-lique. lt is evident that the deposited film can effectively getter the haze after annealing at l l00℃in wet oxy-len ambient for 120 min. The pre-crystallization annealing at 650℃ in argon ambient for 10 min enhances thegettering effectiveness. The low temperature（200～300℃） process of growing extrinsic gettering film reducesthe processing contamination.
王锻强，孙茂友，翟富义，李美英，尤重远
摘 要：<正> Hazy backside gettering of boron-doped <111> siljcon wafer with a-Si: H film deposited by rf glowdischarge technique （rf-GD） has been investigated by SEM, optical microscope and preferential etching tech-lique. lt is evident that the deposited film can effectively getter the haze after annealing at l l00℃in wet oxy-len ambient for 120 min. The pre-crystallization annealing at 650℃ in argon ambient for 10 min enhances thegettering effectiveness. The low temperature（200～300℃） process of growing extrinsic gettering film reducesthe processing contamination.
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