OBSERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON THIN FILMS
来源期刊：Acta Metallurgica Sinica2005年第3期
论文作者：H.Shen Z.C. Liang Z.Y.Liu Y.F.Hu L.S.Wen L.Wang
Key words：poly-Si thin film; intra-granular defects; surface; cross-section;
Abstract: Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemical vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon,poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin films by scan electron microscopy (SEM) technique.
H.Shen1，Z.C. Liang2，Z.Y.Liu3，Y.F.Hu3，L.S.Wen3，L.Wang2
(1.The School of Physics and Engineering, Zhongshan University, Guangzhou 510275,China;
2.Guangzhou Institute of Energy Conversion, The Chinese Academy of Sciences, Guangzhou 510640,China;
3.College of Mechanical Engineering, South China University of Technology, Guangzhou 510640,China)
Abstract:Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemical vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon,poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin films by scan electron microscopy (SEM) technique.
Key words:poly-Si thin film; intra-granular defects; surface; cross-section;
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