Preparation and characterization of ZnO/Cu/ZnO transparent conductive films
来源期刊：中国矿山工程1997年第4期
论文作者：祁保明
关键词：极薄矿体;削壁留矿法;削壁充填法;急倾斜矿体;
摘 要：通过对急倾斜极薄矿体采矿方法现状及存在问题的分析，结合矿山实例探索矿岩中等稳固以上、不适宜削壁充填法的急倾斜极薄矿体的开采方法，认为削壁留矿法是合适的。
Wen-Ying Li1，Lai-Xin Jiang2，Gui-Lin Yin2，Yuan-Yuan Wang2，Zhen Yu1，Dan-Nong He1,2
1. College of Materials Science and Engineering, Shanghai Jiao Tong University2. National Engineering Research Center for Nanotechnology
摘 要：ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type （001） Si and glass substrates at room temperature. The morphology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope （FESEM）, X-ray diffraction （XRD）, UV/Vis spectrophotometer, and Hall effect measurement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conductive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance: resistivity of 2.3×10-4 Ω·cm, carrier concentration of 6.44×1016cm-2 , mobility of 4.51cm2·（V·s）-1 , and acceptable average transmittance of 80 % in the visible range. The transmittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.
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