Properties of Boron-doped μc-Ge:H Films Deposited by Hot-wire CVD
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2015年第3期
论文作者：黄海宾 沈鸿烈 WU Tianru LU Linfeng TANG Zhengxia SHEN Jiancang
文章页码：516 - 519
摘 要：Boron-doped hydrogenated microcrystalline Germanium（μc-Ge:H） fi lms were deposited by hot-wire CVD. H2 diluted Ge H4 and B2H6 were used as precursors and the substrate temperature was kept at 300 ℃. The properties of the samples were analyzed by XRD, Raman spectroscopy, Fourier transform infrared spectrometer and Hall Effect measurement with Van der Pauw method. It is found that the fi lms are partially crystallized, with crystalline fractions larger than 45% and grain sizes smaller than 50 nm. The B-doping can enhance the crystallization but reduce the grain sizes, and also enhance the preferential growth of Ge（220）. The conductivity of the fi lms increases and tends to be saturated with increasing diborane-to-germane ratio. All the Hall mobilities of the samples are larger than 3.8 cm2·V-1·s-1. A high conductivity of 41.3 Ω-1·cm-1 is gained at =6.7%.
黄海宾1,2，沈鸿烈2，WU Tianru2，LU Linfeng2，TANG Zhengxia2，SHEN Jiancang3
1. Institute of Photovoltaics, Nanchang University2. College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics3. National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University
摘 要：Boron-doped hydrogenated microcrystalline Germanium（μc-Ge:H） fi lms were deposited by hot-wire CVD. H2 diluted Ge H4 and B2H6 were used as precursors and the substrate temperature was kept at 300 ℃. The properties of the samples were analyzed by XRD, Raman spectroscopy, Fourier transform infrared spectrometer and Hall Effect measurement with Van der Pauw method. It is found that the fi lms are partially crystallized, with crystalline fractions larger than 45% and grain sizes smaller than 50 nm. The B-doping can enhance the crystallization but reduce the grain sizes, and also enhance the preferential growth of Ge（220）. The conductivity of the fi lms increases and tends to be saturated with increasing diborane-to-germane ratio. All the Hall mobilities of the samples are larger than 3.8 cm2·V-1·s-1. A high conductivity of 41.3 Ω-1·cm-1 is gained at =6.7%.
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