简介概要

Preparation and Interface Studies on HgCdTe/CdTe/GaAs Grown by MOCVD

来源期刊:Rare Metals1992年第2期

论文作者:丁永庆 彭瑞伍 陈记安 杨臣华 陈美霓

文章页码:102 - 106

摘    要:<正> When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and theCdTe/GaAs hybrid substrates suitable for growing Hg1-xCdxTe(CMT)were obtained.The x value in CMT isbetween 0.2 and 0.8.The electrical properties of CMT depend upon the thickness of CdTe epi-layers.TheCdTe/GaAs interface was examined by both scanning electron microscope(SEM)and electron auger spectra(EAS).The influence of defects observed at interface on electrical and optical properties of CMT fihns was dis-cussed.

详情信息展示

Preparation and Interface Studies on HgCdTe/CdTe/GaAs Grown by MOCVD

丁永庆,彭瑞伍,陈记安,杨臣华,陈美霓

摘 要:<正> When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and theCdTe/GaAs hybrid substrates suitable for growing Hg1-xCdxTe(CMT)were obtained.The x value in CMT isbetween 0.2 and 0.8.The electrical properties of CMT depend upon the thickness of CdTe epi-layers.TheCdTe/GaAs interface was examined by both scanning electron microscope(SEM)and electron auger spectra(EAS).The influence of defects observed at interface on electrical and optical properties of CMT fihns was dis-cussed.

关键词:

<上一页 1 下一页 >

有色金属在线官网  |   会议  |   在线投稿  |   购买纸书  |   科技图书馆

中南大学出版社 技术支持 版权声明   电话:0731-88830515 88830516   传真:0731-88710482   Email:administrator@cnnmol.com

互联网出版许可证:(署)网出证(京)字第342号   京ICP备17050991号-6      京公网安备11010802042557号