Preparation and Interface Studies on HgCdTe/CdTe/GaAs Grown by MOCVD
来源期刊：Rare Metals1992年第2期
论文作者：丁永庆 彭瑞伍 陈记安 杨臣华 陈美霓
文章页码：102 - 106
摘 要：<正> When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and theCdTe/GaAs hybrid substrates suitable for growing Hg1-xCdxTe（CMT）were obtained.The x value in CMT isbetween 0.2 and 0.8.The electrical properties of CMT depend upon the thickness of CdTe epi-layers.TheCdTe/GaAs interface was examined by both scanning electron microscope（SEM）and electron auger spectra（EAS）.The influence of defects observed at interface on electrical and optical properties of CMT fihns was dis-cussed.
丁永庆，彭瑞伍，陈记安，杨臣华，陈美霓
摘 要：<正> When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and theCdTe/GaAs hybrid substrates suitable for growing Hg1-xCdxTe（CMT）were obtained.The x value in CMT isbetween 0.2 and 0.8.The electrical properties of CMT depend upon the thickness of CdTe epi-layers.TheCdTe/GaAs interface was examined by both scanning electron microscope（SEM）and electron auger spectra（EAS）.The influence of defects observed at interface on electrical and optical properties of CMT fihns was dis-cussed.
关键词：
