简介概要

Simulation of recrystallization based on EBSD data using a modified Monte Carlo model that considers anisotropic effects in cold-rolled ultra-thin grain-oriented silicon steel

来源期刊:International Journal of Minerals Metallurgy and Materials2020年第9期

论文作者:Li Meng Jun-ming Liu Ning Zhang Hao Wang Yu Han Cheng-xu He Fu-yao Yang Xin Chen

文章页码:1251 - 1258

摘    要:A Monte Carlo Potts model was developed to simulate the recrystallization process of a cold-rolled ultra-thin grain-oriented silicon steel. The orientation and image quality data from electron backscatter diffraction measurements were used as input information for simulation.Three types of nucleation mechanisms, namely, random nucleation, high-stored-energy site nucleation(HSEN), and high-angle boundary nucleation(HABN), were considered for simulation. In particular, the nucleation and growth behaviors of Goss-oriented({011}<100>) grains were investigated. Results showed that Goss grains had a nucleation advantage in HSEN and HABN. The amount of Goss grains was the highest according to HABN, and it matched the experimental measurement. However, Goss grains lacked a size advantage across all mechanisms during the recrystallization process.

详情信息展示

Simulation of recrystallization based on EBSD data using a modified Monte Carlo model that considers anisotropic effects in cold-rolled ultra-thin grain-oriented silicon steel

Li Meng1,Jun-ming Liu2,Ning Zhang1,Hao Wang2,Yu Han3,Cheng-xu He3,Fu-yao Yang3,Xin Chen3

1. Metallurgical Technology Institute,Central Iron & Steel Research Institute2. School of Materials Science and Engineering,University of Science and Technology Beijing3. State Key Laboratory of Advanced Power Transmission Technology,Global Energy Interconnection Research Institute Co.,Ltd

摘 要:A Monte Carlo Potts model was developed to simulate the recrystallization process of a cold-rolled ultra-thin grain-oriented silicon steel. The orientation and image quality data from electron backscatter diffraction measurements were used as input information for simulation.Three types of nucleation mechanisms, namely, random nucleation, high-stored-energy site nucleation(HSEN), and high-angle boundary nucleation(HABN), were considered for simulation. In particular, the nucleation and growth behaviors of Goss-oriented({011}<100>) grains were investigated. Results showed that Goss grains had a nucleation advantage in HSEN and HABN. The amount of Goss grains was the highest according to HABN, and it matched the experimental measurement. However, Goss grains lacked a size advantage across all mechanisms during the recrystallization process.

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