Study on vacuum ultraviolet spectra of amorphous Er2O3 films on Si（001） substrates
来源期刊：JOURNAL OF RARE EARTHS2011年第9期
论文作者：朱燕艳 方泽波 徐闰 陈静 曹海静 李慧玉
文章页码：888 - 890
摘 要：Amorphous Er2O3 films have been fabricated on p-type Si（001） substrates using radio frequency magnetron sputtering technique. Vacuum ultraviolet spectra were employed to investigate the samples. An optical gap of 6.17 eV for Er2O3 films was obtained from the ab-sorption coefficient spectra. A possible reason was put forward to explain the inconsistent results about the band gap of Er2O3 in literatures. Emission spectra exhibited a strong emission band at 494 nm with the incident ultraviolet light of 249 nm. The observed high density of emission bands of Er2O3 films in the visible wavelength indicated that Er2O3 films could be used in Si solar cells for increasing conversion efficiency.
朱燕艳1，方泽波2，徐闰3，陈静1，曹海静1，李慧玉1
1. Department of Mathematics and Physics, Shanghai University of Electric Power2. Department of Physics, Shaoxing University3. School of Materials Science and Engineering, Shanghai University
摘 要：Amorphous Er2O3 films have been fabricated on p-type Si（001） substrates using radio frequency magnetron sputtering technique. Vacuum ultraviolet spectra were employed to investigate the samples. An optical gap of 6.17 eV for Er2O3 films was obtained from the ab-sorption coefficient spectra. A possible reason was put forward to explain the inconsistent results about the band gap of Er2O3 in literatures. Emission spectra exhibited a strong emission band at 494 nm with the incident ultraviolet light of 249 nm. The observed high density of emission bands of Er2O3 films in the visible wavelength indicated that Er2O3 films could be used in Si solar cells for increasing conversion efficiency.
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