Tantalum oxide barrier in magnetic tunnel junctions

Guanghua Yu, Tingting Ren, Wei Ji, Jiao Teng, and Fengwu ZhuMaterials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China

摘 要：<正> Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions （MTJs）. Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy （XPS） was used to characterize the oxidation states of Ta barrier. The experimental results show that the chemical state of tantalum is pure Ta5+ and the thickness of the oxide is 1.3 nm. The unoxi-dized Ta in the barrier may chemically reacted with NiFe layer which is usually used in MTJs to form an intermetallic compound, NiTa2. A magnetic "dead layer" could be produced in the NiFe/Ta interface. The "dead layer" is likely to influence the spinning electron transport and the magnetoresistance effect.

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