Fabrication of hexagonal gallium nitride films on silicon (111) substrates
来源期刊：Rare Metals2003年第3期
论文作者：YANG Li, XUE Chengshan WANG Cuimei LI Huaixiang and REN Yuwen) Chemistry Function Materials Lab, Institute of Semiconductors, Shandong Normal University, Jinan , China) Physics Department, Shandong Normal University, Jinan , China) Inspection Institute for Electronic Products of Shandong, Jinan , China
文章页码：221 - 225
摘 要：<正> Hexagonal gallium nitride films were successfully fabricated through ammoniating Ga2O3 films deposited on silicon （111） substrates by electrophoresis. The structure, composition, and surface morphology of the formed films were characterized by X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, scanning electron microscopy （SEM）, and transmission electron microscopy （TEM）. The measurement results reveal that the polycrystalline GaN films with hexagonal wurtzite structure were successfully grown on the silicon （111） substrates. Preliminary results suggest that varying the ammoniating temperature has obvious effect on the quality of the GaN films formed with this method.
YANG Li, XUE Chengshan WANG Cuimei LI Huaixiang and REN Yuwen1) Chemistry Function Materials Lab, Institute of Semiconductors, Shandong Normal University, Jinan 250014, China2) Physics Department, Shandong Normal University, Jinan 250014, China3) Inspection Institute for Electronic Products of Shandong, Jinan 250000, China
摘 要：<正> Hexagonal gallium nitride films were successfully fabricated through ammoniating Ga2O3 films deposited on silicon （111） substrates by electrophoresis. The structure, composition, and surface morphology of the formed films were characterized by X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, scanning electron microscopy （SEM）, and transmission electron microscopy （TEM）. The measurement results reveal that the polycrystalline GaN films with hexagonal wurtzite structure were successfully grown on the silicon （111） substrates. Preliminary results suggest that varying the ammoniating temperature has obvious effect on the quality of the GaN films formed with this method.
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