应用俄歇电子能谱研究钨的晶界杂质

来源期刊：中南大学学报(自然科学版)1984年第3期

论文作者：左铁镛

文章页码：28 - 36

关键词：晶界； 俄歇电子能谱仪； 掺杂钨丝； 杂质浓度； 断口； 杂质元素； 俄歇分析； 烧结坯； 基本原因； 富集

摘    要：对粉末冶金法制备的纯钨和含硅、钾、铝的掺杂钨烧结坯及钨丝的断口应用俄歇电子能谱仪(AES)、扫描电子显微镜(SEM)作系统的检测分析。实验表明:磷、钾以及氧、碳等杂质在断口上明显富集,它们是钨的主要晶界杂质,是造成钨脆裂的基本原因。实验还证实,碳在晶界上的富集浓度和钨坯的烧结制度及加工与实验中的污染有密切关系。加工形变、热处理条件和晶粒度等对钨晶界的杂质浓度及分布都有一定影响。

Abstract: The fracture surfaces of pure tungsten compacts, Si, Al, K-doped tungsten compacts and Si, Al, K-doped tungsten wires are systematically examined and analyzed by Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM) The experimental results show that elements of P, O and C concentrate on the fracture surfaces of pure tungsten and elements of K, O and C concentrate on the fracture surfaces of doped tungsten. They are main intergranular impur- ities in tungsten. And mainly because of them tungsten fractures take place at room temperature. The results also show that the concentration of C and O on grain boundary is correlated with the sintering schedule of tungsten compacts and the contamination during their production, procession and examinatin. The conditions of deformation and heat treatment and grain-size also affect the concentration and distribution of intergranular impurities.