Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers
来源期刊：Acta Metallurgica Sinica2014年第6期
论文作者：Xianglong Yang Kun Yang Yingxin Cui Yan Peng Xiufang Chen Xuejian Xie Xiaobo Hu
文章页码：1083 - 1087
摘 要：The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-insulating4H-SiC wafer indicated that the anomalous resistivity was caused by polytype inclusion. Based on the activation energies of different SiC polytypes calculated from resistivity versus temperature data measured by COREMA-VT, the resistivities in the vanadium-doped semi-insulating 4H-SiC wafer with 6H polytype inclusion were calculated. The calculated resistivities are quite consistent with the measured resistivities. Furthermore, the compensation mechanism for the formation of anomalous resistivity was proposed.
Xianglong Yang，Kun Yang，Yingxin Cui，Yan Peng，Xiufang Chen，Xuejian Xie，Xiaobo Hu
State Key Laboratory of Crystal Materials, Shandong University
摘 要：The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-insulating4H-SiC wafer indicated that the anomalous resistivity was caused by polytype inclusion. Based on the activation energies of different SiC polytypes calculated from resistivity versus temperature data measured by COREMA-VT, the resistivities in the vanadium-doped semi-insulating 4H-SiC wafer with 6H polytype inclusion were calculated. The calculated resistivities are quite consistent with the measured resistivities. Furthermore, the compensation mechanism for the formation of anomalous resistivity was proposed.
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