Preparation of Ga1-xInxAs1-ySby by MOCVD
来源期刊：Rare Metals1993年第2期
论文作者：韦光宇 彭瑞伍 丁永庆 任尧成
文章页码：103 - 109
摘 要：<正> The GalnAsSb quaternary alloys for 2～4 μm long wavelength optoelectronics have been prepared byMOCVD.The growth of buffer layers and the employment of GaSb/GaAs and GaSb/GaSb hybridsubstrates are mentioned,which effectively improve the properties of GalnAsSb epilayers.In order to controlthe epitaxial growth of GaSb and GalnAsSb,emphasis is given on the deposition rates,growth temperaturesand the relationship between growth conditions and the distribution coefficients of In and Sb.The experimen-tal solid compositions in this work are predicted by the thermodynamic calculations.Whether the growth ofGalnAsSb epilayers is controlled by chemical reactions or by mass diffusions depends on growth temperatures.This argument is verified by kinetic considerations.The FWHMs of the DCXD （double crystal X-raydiffraction）spectra of GalnAsSb epilayers grown on GaSb/GaSb and GaSb/GaAs hybrid substrates areabout 200～300 arcsec and 800 arcsec respectively.The unintentionally doped GalnAsSb epilayers have themobilities of μp=100～240 cm2/V·s at 300 K.The corresponding wavelength ofMOCVD GaInAsSb alloysis calculated from EPMA（electronic probe microanalysis）data and determined by FTIR（Fourier transformedinfrared spectroscopy）measurement.
韦光宇，彭瑞伍，丁永庆，任尧成
摘 要：<正> The GalnAsSb quaternary alloys for 2～4 μm long wavelength optoelectronics have been prepared byMOCVD.The growth of buffer layers and the employment of GaSb/GaAs and GaSb/GaSb hybridsubstrates are mentioned,which effectively improve the properties of GalnAsSb epilayers.In order to controlthe epitaxial growth of GaSb and GalnAsSb,emphasis is given on the deposition rates,growth temperaturesand the relationship between growth conditions and the distribution coefficients of In and Sb.The experimen-tal solid compositions in this work are predicted by the thermodynamic calculations.Whether the growth ofGalnAsSb epilayers is controlled by chemical reactions or by mass diffusions depends on growth temperatures.This argument is verified by kinetic considerations.The FWHMs of the DCXD （double crystal X-raydiffraction）spectra of GalnAsSb epilayers grown on GaSb/GaSb and GaSb/GaAs hybrid substrates areabout 200～300 arcsec and 800 arcsec respectively.The unintentionally doped GalnAsSb epilayers have themobilities of μp=100～240 cm2/V·s at 300 K.The corresponding wavelength ofMOCVD GaInAsSb alloysis calculated from EPMA（electronic probe microanalysis）data and determined by FTIR（Fourier transformedinfrared spectroscopy）measurement.
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