Physically-based modeling for hole scattering rate in strained Si1-xGex/(100)Si
来源期刊：中南大学学报(英文版)2015年第2期
论文作者：WANG Bin(王斌) HU Hui-yong(胡辉勇) ZHANG He-ming(张鹤鸣) SONG Jian-jun(宋建军) 张玉明
文章页码：430 - 436
Key words：strained Si1-xGex; biaxial stress; hole scattering rate; effective mass
Abstract: based on the Fermi’s golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate (SR) in strained Si1-xGex/(100)Si was presented, which takes into account a variety of scattering mechanisms, including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-xGex/(100)Si also decreases obviously with increasing Ge fraction (x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-xGex/(100) Si decreases by about 58%.
WANG Bin(王斌)1, 2, HU Hui-yong(胡辉勇)2, ZHANG He-ming(张鹤鸣)2, SONG Jian-jun(宋建军)2, ZHANG Yu-ming(张玉明)2
(1. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;
2. Key Lab of Wide Band-Gap Semiconductor Materials and Devices
(School of Microelectronics, Xidian University), Xi’an 710071, China)
Abstract:based on the Fermi’s golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate (SR) in strained Si1-xGex/(100)Si was presented, which takes into account a variety of scattering mechanisms, including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-xGex/(100)Si also decreases obviously with increasing Ge fraction (x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-xGex/(100) Si decreases by about 58%.
Key words:strained Si1-xGex; biaxial stress; hole scattering rate; effective mass
