Resistive Switching Behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p+-Si Heterostructure Devices for Nonvolatile Memory Applications
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2017年第1期
论文作者：韦长成 王华 XU Jiwen ZHANG Yupei ZHANG Xiaowen YANG Ling
文章页码：29 - 32
摘 要：The Ag/Mg0.2Zn0.8O/ZnMn2O4/p+-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio RHRS/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×103cycles and the degradation is invisible for more than 106 s.
韦长成，王华，XU Jiwen，ZHANG Yupei，ZHANG Xiaowen，YANG Ling
School of Materials Science and Engineering, Guilin University of Electronic Technology
摘 要：The Ag/Mg0.2Zn0.8O/ZnMn2O4/p+-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio RHRS/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×103cycles and the degradation is invisible for more than 106 s.
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