GROWTH OF β-SiC BY rf SPUTTERING ON SILICON SUBSTRATES
来源期刊：Acta Metallurgica Sinica2002年第2期
论文作者：E.Q.Xie S.Lin Q.Wen C.C.Ning Z.W.Ma
Key words：SiC. sputtering. IR. XRD;
Abstract: Rf sputtering in an Ar discharge of a SiC target has been used to deposit β-SiCfilms on Si-(111) substrates. XRD and infrared absorption spectra measurementswere used to characterize the films. The results show that the deposited films are(111)-oriented β-SiC films, and a C rich buffer layer formed between the substrateand SiC films when the substrate temperature is higher than 800℃. IR and XRDresults of an annealing process at 800℃ in H2 atmosphere, indicate that the crystallinequality is determined mainly by the substrate temperature during the film growth, andthe annealing process can improve the quality of Si/SiC interface. Higher substratetemperature leads to better quality of crystalline structttre and lower quality of SiC/Siinterfaces. Combined with an annealing process we obtained SiC films with very goodquality of both crystalline and SiC /Si interface.
E.Q.Xie1，S.Lin1，Q.Wen1，C.C.Ning1，Z.W.Ma1
(1.Department of Physics,Lanzhou University,Lanzhou 730000,China)
Abstract:Rf sputtering in an Ar discharge of a SiC target has been used to deposit β-SiCfilms on Si-(111) substrates. XRD and infrared absorption spectra measurementswere used to characterize the films. The results show that the deposited films are(111)-oriented β-SiC films, and a C rich buffer layer formed between the substrateand SiC films when the substrate temperature is higher than 800℃. IR and XRDresults of an annealing process at 800℃ in H2 atmosphere, indicate that the crystallinequality is determined mainly by the substrate temperature during the film growth, andthe annealing process can improve the quality of Si/SiC interface. Higher substratetemperature leads to better quality of crystalline structttre and lower quality of SiC/Siinterfaces. Combined with an annealing process we obtained SiC films with very goodquality of both crystalline and SiC /Si interface.
Key words:SiC. sputtering. IR. XRD;
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