Progress of MOCVD in China
来源期刊：Rare Metals1993年第1期
论文作者：章其麟
文章页码：67 - 70
摘 要：<正> The paper reviewed the progresses of MOCVD technique used in the growth of group Ⅲ-V compoundsemiconductor materials and the preparation of devices in Hebei Semiconductor Research Institute （HSRI）,and also introduced some of the recent progresses in China.
章其麟
摘 要：<正> The paper reviewed the progresses of MOCVD technique used in the growth of group Ⅲ-V compoundsemiconductor materials and the preparation of devices in Hebei Semiconductor Research Institute （HSRI）,and also introduced some of the recent progresses in China.
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