GRAIN-BOUNDARY PRECIPITATION UNDER IRRADIATION IN DILUTE BINARY ALLOYS
来源期刊：Acta Metallurgica Sinica2003年第5期
论文作者：S.H.Song J.Liu R.G.Faulkner Z.X.Yuan
Key words：segregation; precipitation; grain boundary; irradiation;
Abstract: Irradiation-induced grain boundary segregation of solute atoms frequently bring about grain boundary precipitation of a second phase because of its making the solubility limit of the solute surpassed at grain boundaries. Until now the kinetic models for irradiation-induced grain boundary precipitation have been sparse. For this reason, we have theoretically treated grain boundary precipitation under irradiation in dilute binary alloys. Predictions ofγ'-Ni3Si precipitation at grain boundaries ave made for a dilute Ni-Si alloy subjected to irradiation. It is demonstrated that grain boundary silicon segregation under irradiation may lead to grain boundaryγ'-Ni3 Si precipitation over a certain temperature range.
S.H.Song1，J.Liu1，R.G.Faulkner2，Z.X.Yuan1
(1.School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China;
2.Institute of Polymer Technology and Materials Engineering,Loughborough University,Loughborough,Leicestershire LE11 3TU,UK)
Abstract:Irradiation-induced grain boundary segregation of solute atoms frequently bring about grain boundary precipitation of a second phase because of its making the solubility limit of the solute surpassed at grain boundaries. Until now the kinetic models for irradiation-induced grain boundary precipitation have been sparse. For this reason, we have theoretically treated grain boundary precipitation under irradiation in dilute binary alloys. Predictions ofγ''-Ni3Si precipitation at grain boundaries ave made for a dilute Ni-Si alloy subjected to irradiation. It is demonstrated that grain boundary silicon segregation under irradiation may lead to grain boundaryγ''-Ni3 Si precipitation over a certain temperature range.
Key words:segregation; precipitation; grain boundary; irradiation;
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